Temperature effect on the electrical and optical properties of indium-selenide thin-films
Identifieur interne : 012706 ( Main/Repository ); précédent : 012705; suivant : 012707Temperature effect on the electrical and optical properties of indium-selenide thin-films
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Abstract
Indium-Selenide thin-films have been prepared by the thermal-evaporation technique at a pressure of 4.5×10-6 torr and a temperature of 673-873 K. For both the as-deposited and annealed films, (i) the electrical conductivity increased with increasing temperature and (ii) the variation of activation energy follows the island structure theory. The temperature co-efficient of resistance (T.C.R.) and Hall-effect measurements indicate that the sample is a n-type carrier. The optical spectra for both types of films were obtained in the wavelength range 0.3 < λ < 2.5 μm, and by comparing the magnitude of transmittance spectra, it is found that the annealed films are more transparent than the as-deposited ones in the UV and visible range. The integrated transmittance and reflectance values were obtained: the high values of Tlum and Tsol for the annealed films suggest that indium selenide may be used in selective-surface devices.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature effect on the electrical and optical properties of indium-selenide thin-films</title><author><name sortKey="Sen, S S" uniqKey="Sen S">S. S. Sen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics and Electronics, University of Rajshahi</s1><s2>Rajshahi-6205</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Rajshahi-6205</wicri:noRegion></affiliation></author><author><name sortKey="Biswas, N N" uniqKey="Biswas N">N. N. Biswas</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics and Electronics, University of Rajshahi</s1><s2>Rajshahi-6205</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Rajshahi-6205</wicri:noRegion></affiliation></author><author><name sortKey="Khan, K A" uniqKey="Khan K">K. A. Khan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics and Electronics, University of Rajshahi</s1><s2>Rajshahi-6205</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Rajshahi-6205</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0186284</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 00-0186284 INIST</idno><idno type="RBID">Pascal:00-0186284</idno><idno type="wicri:Area/Main/Corpus">013587</idno><idno type="wicri:Area/Main/Repository">012706</idno></publicationStmt><seriesStmt><idno type="ISSN">0306-2619</idno><title level="j" type="abbreviated">Appl. energy</title><title level="j" type="main">Applied energy</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Activation energy</term><term>Annealing</term><term>Binary compounds</term><term>Electrical conductivity</term><term>Experimental study</term><term>Indium selenides</term><term>Infrared spectra</term><term>Inorganic compounds</term><term>Integrated intensity</term><term>Reflection spectrum</term><term>Semiconductor materials</term><term>Temperature dependence</term><term>Thin films</term><term>Visible spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Conductivité électrique</term><term>Dépendance température</term><term>Energie activation</term><term>Spectre visible</term><term>Spectre IR</term><term>Spectre absorption</term><term>Spectre réflexion</term><term>Recuit</term><term>Intensité intégrée</term><term>Indium séléniure</term><term>Matériau semiconducteur</term><term>Etude expérimentale</term><term>Composé minéral</term><term>Composé binaire</term><term>InSe</term><term>In Se</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium-Selenide thin-films have been prepared by the thermal-evaporation technique at a pressure of 4.5×10<sup>-6</sup> torr and a temperature of 673-873 K. For both the as-deposited and annealed films, (i) the electrical conductivity increased with increasing temperature and (ii) the variation of activation energy follows the island structure theory. The temperature co-efficient of resistance (T.C.R.) and Hall-effect measurements indicate that the sample is a n-type carrier. The optical spectra for both types of films were obtained in the wavelength range 0.3 < λ < 2.5 μm, and by comparing the magnitude of transmittance spectra, it is found that the annealed films are more transparent than the as-deposited ones in the UV and visible range. The integrated transmittance and reflectance values were obtained: the high values of T<sub>lum</sub> and T<sub>sol</sub> for the annealed films suggest that indium selenide may be used in selective-surface devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0306-2619</s0></fA01><fA02 i1="01"><s0>APENDX</s0></fA02><fA03 i2="1"><s0>Appl. energy</s0></fA03><fA05><s2>65</s2></fA05><fA06><s2>1-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature effect on the electrical and optical properties of indium-selenide thin-films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>ENERGEX'98: Proceedings of the 7th International Energy Conference</s1></fA09><fA11 i1="01" i2="1"><s1>SEN (S. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>BISWAS (N. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>KHAN (K. A.)</s1></fA11><fA12 i1="01" i2="1"><s1>ALNASER (W. E.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>PROBERT (S. D.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>WALSH (P. M.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Applied Physics and Electronics, University of Rajshahi</s1><s2>Rajshahi-6205</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>Department of Physics, University of Bahrain, PO Box 32038</s1><s2>Bahrain</s2><s3>BHR</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Department of Applied Energy, Cranfield University</s1><s2>Bedfordshire MK43 0AL</s2><s3>GBR</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Sandia National Laboratories, Mail Stop 9051</s1><s2>Livermore CA 94551-0969</s2><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>University of Bahrain</s1><s2>Bahrain</s2><s3>BHR</s3><s9>patr.</s9></fA18><fA18 i1="02" i2="1"><s1>International Energy Foundation</s1><s3>INT</s3><s9>patr.</s9></fA18><fA20><s1>51-58</s1></fA20><fA21><s1>2000</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>17162</s2><s5>354000086258900050</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0186284</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied energy</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium-Selenide thin-films have been prepared by the thermal-evaporation technique at a pressure of 4.5×10<sup>-6</sup> torr and a temperature of 673-873 K. For both the as-deposited and annealed films, (i) the electrical conductivity increased with increasing temperature and (ii) the variation of activation energy follows the island structure theory. The temperature co-efficient of resistance (T.C.R.) and Hall-effect measurements indicate that the sample is a n-type carrier. The optical spectra for both types of films were obtained in the wavelength range 0.3 < λ < 2.5 μm, and by comparing the magnitude of transmittance spectra, it is found that the annealed films are more transparent than the as-deposited ones in the UV and visible range. The integrated transmittance and reflectance values were obtained: the high values of T<sub>lum</sub> and T<sub>sol</sub> for the annealed films suggest that indium selenide may be used in selective-surface devices.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C61L</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépendance température</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Energie activation</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Activation energy</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Spectre visible</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Visible spectra</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Spectre IR</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Infrared spectra</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Recuit</s0><s5>14</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Annealing</s0><s5>14</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Intensité intégrée</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Integrated intensity</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Intensidad integrada</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>18</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Experimental study</s0><s5>18</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Composé minéral</s0><s5>19</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>19</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Composé binaire</s0><s5>20</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Binary compounds</s0><s5>20</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>InSe</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>In Se</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>136</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ENERGEX'98 International Energy Conference</s1><s2>7</s2><s3>Bahrain BHR</s3><s4>1998-11-19</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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